Low Losses Ferrites for High Integration Level in Power Electronics
نویسندگان
چکیده
منابع مشابه
emittance control in high power linacs
چکیده این پایان نامه به بررسی اثر سیم پیچ مغناطیسی و کاوه یِ خوشه گر با بسامد رادیویی بر هاله و بیرونگراییِ باریکه هایِ پیوسته و خوشه ایِ ذرات باردار در شتابدهنده های خطیِ یونی، پروتونی با جریان بالا می پردازد و راه حل هایی برای بهینه نگهداشتن این کمیتها ارایه می دهد. بیرونگرایی یکی از کمیتهای اساسی باریکه هایِ ذرات باردار در شتابدهنده ها است که تاثیر قابل توجهی بر قیمت، هزینه و کاراییِ هر شتابدهند...
High-level Synthesis for Low-power Design
Power and energy efficiency have emerged as first-order design constraints across the computing spectrum from handheld devices to warehouse-sized datacenters. As the number of transistors continues to scale, effectively managing design complexity under stringent power constraints has become an imminent challenge of the IC industry. The manual process of power optimization in RTL design has been...
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A circuit technique that reduces the boost-converter losses caused by the reverse-recovery current of the rectifier is described. The losses are reduced by inserting an inductor in the series path of the boost switch and rectifier to control the di=dt rate of the rectifier during its turn off. The energy from the inductor after the boost switch turn off is returned to the input or delivered to ...
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N.B.: When citing this work, cite the original publication. Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y., (2017), Graphene integration with nitride semiconductors for high power and high frequency electronics, Physica Status Solidi (a) applications and materials science, 214(4). https://dx.doi.org/10.1002/pss...
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ژورنال
عنوان ژورنال: Journal of the Japan Society of Powder and Powder Metallurgy
سال: 2014
ISSN: 0532-8799,1880-9014
DOI: 10.2497/jjspm.61.s211